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Journal Articles

Effects of a low-energy proton irradiation on n $^{+}$ /p-AlInGaP solar cells

Lee, H. S.*; Yamaguchi, Masafumi*; Ekins-Daukes, N. J.*; Khan, A.*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.564 - 567, 2006/04

https://doi.org/10.1016/j.physb.2005.12.142

Times Cited Count：2 Percentile：12.58(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Defect-engineering in SiC by ion implantation and electron irradiation

Pensl, G.*; Ciobanu, F.*; Frank, T.*; Kirmse, D.*; Krieger, M.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi; et al.

Microelectronic Engineering, 83(1), p.146 - 149, 2006/01

https://doi.org/10.1016/j.mee.2005.10.040

Times Cited Count：15 Percentile：59.32(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Defect observation of AlInGaP irradiated with 30 keV protons for multi-junction space solar cells

Lee, H. S.*; Ekins-Daukes, N. J.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.

Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.556 - 558, 2005/00

no abstracts in English

Journal Articles

Native and radiation induced defects in lattice mismatched InGaAs and InGaP

Ekins-Daukes, N. J.*; Arafune, Koji*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; et al.

Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.683 - 686, 2005/00

no abstracts in English

Journal Articles

Negative-U-centers in 4H- and 6H-SiC detected by spectral light excitation

Weidner, M.*; Pensl, G.*; Nagasawa, Hiroyuki*; Schner, A.*; Oshima, Takeshi

Materials Science Forum, 457-460, p.485 - 488, 2004/10

no abstracts in English

Journal Articles

Deep level transient spectroscopy study of electron-irradiated CuInSe $_{2}$ thin films

Okada, Hiroshi*; Fujita, Naoki*; Lee, H.-S.*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Journal of Electronic Materials, 32(9), p.L5 - L8, 2003/09

https://doi.org/10.1007/s11664-003-0234-8

Times Cited Count：1 Percentile：12.39(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Low energy proton-induced defects on n $^{+}$ /p InGaP solar cell

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Solar Energy Materials and Solar Cells, 75(1-2), p.327 - 333, 2003/01

https://doi.org/10.1016/S0927-0248(02)00176-9

Times Cited Count：3 Percentile：30.01(Energy & Fuels)

n $^{+}$ /p InGaP junctions were irradiated with 100keV-protons, and the effect on their electrical properties were studied using C-V and DLTS methods.The n $^{+}$ /p InGaP junctions were fabricated by MOCVD method.They were irradiated up to 1E12 /cm $^{2}$ at RT. The carrier removal rate was estimated to be 6.1E4 cm $^{-1}$ from the fluence dependence of carrier concentration. H1 peaks which were observed at 400 K in DLTS measurements were found after irradiation.It was concluded that H1 peaks relates residual defects which act as carrier removal centers.

Journal Articles

Majority- and minority-carrier deep level traps in proton-irradiated $n^{+}/p$ -InGaP space solar cells

Dharmarasu, N.*; Yamaguchi, Masafumi*; Bourgoin, J. C.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Applied Physics Letters, 81(1), p.64 - 66, 2002/07

https://doi.org/10.1063/1.1491005

Times Cited Count：17 Percentile：55.85(Physics, Applied)

We studied the properties of observed defects in n $^{+}$ /p-InGaP solar cells created by irradiation of protons with different energies.Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E $_{V}$ +0.900.05eV), HP2 (E $_{V}$ +0.730.05eV), H2 (E $_{V}$ +0.55eV),and EP1 (E $_{C}$ 0.54eV),were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 traps present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not.

Journal Articles

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.489 - 492, 2002/05

no abstracts in English

Journal Articles

Investigation of electron irradiation induced defects in single crystal CuInSe $_{2}$ thin films

Fujita, Naoki*; Lee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Shingaku Giho, 102(77), p.79 - 84, 2002/05

http://ci.nii.ac.jp/naid/110003175318

no abstracts in English

Journal Articles

Annealing behavior of vacancies and Z $_{1/2}$ levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Weidner, M.*; Frank, T.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi

Applied Physics Letters, 79(24), p.3950 - 3952, 2001/12

https://doi.org/10.1063/1.1426259

Times Cited Count：39 Percentile：79.52(Physics, Applied)

no abstracts in English

Journal Articles

Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide

Weidner, M.*; Frank, T.*; Pensl, G.*; Kawasuso, Atsuo; Ito, Hisayoshi; Krause-Rehberg, R.*

Physica B; Condensed Matter, 308-310, p.633 - 636, 2001/12

https://doi.org/10.1016/S0921-4526(01)00772-4

Times Cited Count：29 Percentile：78.2(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Krause-Rehberg, R.*; Triftshuser, W.*; Pensl, G.*

Physica B; Condensed Matter, 308-310, p.660 - 663, 2001/12

https://doi.org/10.1016/S0921-4526(01)00783-9

Times Cited Count：13 Percentile：57.97(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Deep-level transient spectroscopy analysis of proton-irradiated n $^{+}$ /p InGaP solar cell

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Physica B; Condensed Matter, 308-310, p.1181 - 1184, 2001/12

https://doi.org/10.1016/S0921-4526(01)00935-8

Times Cited Count：7 Percentile：41.38(Physics, Condensed Matter)

Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.

Journal Articles

Impact of lattice defects on the preformance degradation of Si photodiodes by high-temperature and electron irradiation

Oyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu*; Takami, Yasukiyo*; Ito, Hisayoshi

Physica B; Condensed Matter, 308-310, p.1226 - 1229, 2001/12

https://doi.org/10.1016/S0921-4526(01)00949-8

Times Cited Count：31 Percentile：79.69(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Vacancies and deep levels in electron-irradiated 6 SiC epilayers studied by positron annihilation and deep level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Sperr, P.*; Ito, Hisayoshi

Journal of Applied Physics, 90(7), p.3377 - 3382, 2001/10

https://doi.org/10.1063/1.1402144

Times Cited Count：42 Percentile：81.14(Physics, Applied)

no abstracts in English

Journal Articles

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Khan, A.*; Yamaguchi, Masafumi*; Oshita, Yoshio*; Dharmarasu, N.*; Araki, Kenji*; Abe, Takao*; Ito, Hisayoshi; Oshima, Takeshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Journal of Applied Physics, 90(3), p.1170 - 1178, 2001/08

https://doi.org/10.1063/1.1384855

Times Cited Count：56 Percentile：86.43(Physics, Applied)

1MeV-electron and 10MeV-proton irradiations into Si doped various impurities such as B, Ga, O and C were performed and residual defects in the Si were studied using DLTS and C-V measurements.It was revealed that Ci-Oi whose level is Ev-0.36 eV and Bi-Oi whose energy is Ec-0.18eV were generated. In Ga-doped Si, the generation of Ci-Oi was suppressed. Since Ci-Oi acts as scattering center, this result indicates that the radiation resistance of solar cells is improved by using Ga-doped Si substrates.Furthermore, a new defect level (Ev+18eV) was observed in Ga-dpoed Si by irradiation. This defect level was annealed out above 350 C.

Journal Articles